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CY14B101LPRELIMINARY

Document #: 001-06400 Rev. *E Page 18 of 18

Document History Page

Document Title: CY14B101L 1-Mbit (128K x 8) nvSRAM

Document Number: 001-06400

REV. ECN NO.

Issue

Date

Orig. of

Change

Description of Change

** 425138 See ECN TUP New Data Sheet

*A 437321 See ECN TUP Show Data Sheet on External Web

*B 471966 See ECN TUP Changed I

CC3

from 5 mA to 10 mA

Changed ISB from 2 mA to 3 mA

Changed V

IH(min)

from 2.2V to 2.0V

Changed t

RECALL

from 40 µs to 50 µs

Changed Endurance from 1 Million Cycles to 500K Cycles

Changed Data Retention from 100 Years to 20 Years

Added Soft Sequence Processing Time Waveform

Updated Part Numbering Nomenclature and Ordering Information

*C 503272 See ECN PCI Changed from Advance to Preliminary

Changed the term “Unlimited” to “Infinite”

Changed Endurance from 500K Cycles to 200K Cycles

Added temperature spec to Data Retention - 20 years at 55°C

Removed Icc

values from the DC table for 25 ns and 35 ns industrial grade

Changed Icc

value from 3 mA to 6 mA in the DC table

Added a footnote on V

Changed V

SWITCH(min)

from 2.55V to 2.45V

Added footnote 17 related to using the software command

Updated Part Nomenclature Table and Ordering Information Table

*D 597002 See ECN TUP Removed V

SWITCH(min)

spec from the AutoStore/Power Up RECALL table

Changed t

GLAX

spec from 20 ns to 1 ns

Added t

DELAY(max)

spec of 70 µs in the hardware STORE cycle table

Removed t

HLBL

specification

Changed t

specification form 70 µs (min) to 70 µs (max)

Changed V

CAP(max)

from 57 µF to 120 µF

*E 688776 See ECN VKN Added footnote related to HSB

Changed t

GLAX

to t

GHAX

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